?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com april 2005 RMPA0963 i-lo? rev. e RMPA0963 i - l o ? cellular cdma, cdma2000-1x and wcdma power amplifier module (preliminary) RMPA0963 i-lo? cellular cdma, cdma2000-1x and wcdma power amplifier module features 38% cdma/wcdma efficiency at +28 dbm pout 14% cdmaa/wcdma efficiency (80 ma total current) at +16 dbm pout meets hsdpa performance requirements linear operation in low-power mode up to +19 dbm 50% amps mode efficiency at +31 dbm pout low quiescent current (iccq): 20 ma in low-power mode single positive-supply operation with low power and shutdown modes ? 3.4v typical vcc operation low vref (2.85v) compatible with advanced handset chipsets compact lead-free compliant lcc package ? (4.0 x 4.0 x 1.5 mm nominal) industry standard pinout internally matched to 50 ohms and dc blocked rf input/output meets is-95/cdma2000-1xrtt/wcdma performance requirements general description the RMPA0963 power amplifier module (pam) is fairchild?s lat- est innovation in 50 ohm matched, surface mount modules tar- geting cellular cdma/wcdma/hsdpa, amps and wireless local loop (wll) applications. answering the call for ultra-low dc power consumption and extended battery life in portable electronics, the RMPA0963 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium rf out- put power levels (< +16 dbm), where the handset most often operates. a simple two-state vmode control is all that is needed to reduce operating current by more than 50% at 16 dbm output power, and quiescent current (iccq) by as much as 70% com- pared to traditional power-saving methods. no additional cir- cuitry, such as dc-to-dc converters, are required to achieve this remarkable improvement in amplifier efficiency. further, the 4x4x1.5 mm lcc package is pin-compatible and a drop-in replacement for last generation 4x4 mm pams widely used today, minimizing the design time to apply this performance- enhancing technology. the multi-stage gaas microwave mono- lithic integrated circuit (mmic) is manufactured using fairchild rf?s ingap heterojunction bipolar transistor (hbt) process. device functional block diagram vref vmode rf in gnd vcc1 rf out gnd gnd gnd 7 6 8 9 10 4 3 2 bias/mode switch 11 (paddle ground on package bottom) 1 5 vcc2 input match output match mmic (top view) preliminary
2 www.fairchildsemi.com RMPA0963 i-lo? rev. e RMPA0963 i - l o ? cellular cdma, cdma2000-1x and wcdma power amplifier module (preliminary) absolute maximum ratings 1 note: 1. no permanent damage with one parameter set at extreme limit. other parameters set to typical values. electrical characteristics 1 notes: 1. all parameters met at tc = +25c, vcc = +3.4v, vref = 2.85v and load vswr o 1.2:1, unless otherwise noted. 2. all phase angles. 3. guaranteed by design. symbol parameter value units vcc1, vcc2 supply voltages 5.0 v vref reference voltage 2.6 to 3.5 v vmode power control voltage 3.5 v pin rf input power +10 dbm tstg storage temperature -55 to +150 c symbol parameter min typ max units comments f operating frequency 824 849 mhz cdma/wcdma operation gp power gain 30 20 db db po=+28 dbm; vmode=0v po=+16 dbm; vmode p 2.0v po linear output power 28 16 dbm dbm vmode=0v vmode p 2.0v paed paed (digital) @ +28 dbm 38 % vmode=0v paed (digital) @ +16 dbm 14 % vmode p 2.0v itot high power total current 480 ma po=+28 dbm, vmode=0v low power total current 80 ma po=+16 dbm, vmode p 2.0v cdma adjacent channel power ratio is-95 a/b modulation acpr1 885 khz offset -50 -55 dbc dbc po=+28 dbm; vmode=0v po=+16 dbm; vmode p 2.0v acpr2 1.98 mhz offset -60 -65 dbc dbc po=+28 dbm; vmode=0v po=+16 dbm; vmode p 2.0v wcdma adjacent channel leakage ratio wcdma modulation 3gpp 3.2 03-00 dpcch +1 dcdch aclr1 5 mhz offset -40 -45 dbc dbc po=+28 dbm; vmode=0v po=+16 dbm; vmode p 2.0v aclr2 10 mhz offset -53 -60 dbc dbc po=+28 dbm; vmode=0v po=+16 dbm; vmode p 2.0v amps operation gp power gain 29 db po=+31 dbm paea power-added efficiency (analog) 50 % po=+31 dbm general characteristics vswr input impedance 2.0:1 2.5:1 nf noise figure 3 4db rx no receive band noise power 3 -134 dbm/hz po<+28 dbm; 869 to 894mhz 2fo-5fo harmonic suppression 3 -30 dbc po o +28 dbm s spurious outputs 2,3 -60 dbc load vswr o 5.0:1 ruggedness w/ load mismatch 3 10:1 no permanent damage. tc case operating temperature -30 85 c dc characteristics iccq quiescent current 20 ma vmode p 2.0v iref reference current 2 ma po+28 dbm icc(off) shutdown leakage current 1 5 a no applied rf signal
3 www.fairchildsemi.com RMPA0963 i-lo? rev. e RMPA0963 i - l o ? cellular cdma, cdma2000-1x and wcdma power amplifier module (preliminary) recommended operating conditions dc turn-on sequence 1) vcc1 = vcc2 = 3.4v (typical) 2) vref = 2.85v (typical) 3) high-power: vmode = 0v (pout > 16 dbm) low-power: vmode = 2v (pout < 16 dbm) symbol parameter min typ max units f operating frequency 824 849 mhz vcc1, vcc2 supply voltage 3.0 3.4 4.2 v vref reference voltage (operating) (shutdown) 2.7 0 2.85 3.1 0.5 v v vmode bias control voltage (low-power) (high-power) 1.8 0 2.0 3.0 0.5 v v pout linear output power (high-power) (low-power) +16 +28 +19 dbm dbm tc case operating temperature -30 +85 c
4 www.fairchildsemi.com RMPA0963 i-lo? rev. e RMPA0963 i - l o ? cellular cdma, cdma2000-1x and wcdma power amplifier module (preliminary) 4 5 6 8 3,7,9,10 sma1 rf in sma2 rf out vcc1 vcc2 (package base) 50 ohm trl 50 ohm trl 3.3 f 1 vref 3.3 f 330 pf 1000 pf 1000 pf 0.1 f 2 vmode 11 xytt z 0963 evaluation board layout materials list evaluation board schematic qty item no. part number description vendor 1 1 g657549-1 v2 pc board fairchild 2 2 #142-0701-841 sma connector johnson 8 3 #2340-5211tn terminals 3m ref 4 g657583 assembly, RMPA0963 fairchild 2 5 grm39x7r102k50v 1000pf capacitor (0603) murata 2 5 (alt) ecj-1vb1h102k 1000pf capacitor (0603) panasonic 2 6 c3216x5r1a335m 3.3f capacitor (1206) tdk 1 7 grm39y5v104z16v 0.1f capacitor (0603) murata 1 7 (alt) ecj-1vb1c104k 0.1f capacitor (0603) panasonic 1 8 grm39x7r331k50v 330pf capacitor (0603) murata a/r 9 sn63 solder paste indium corp. a/r 10 sn96 solder paste indium corp. 1 2 4 5 3 7 5 6 6 8 xytt z 0963
5 www.fairchildsemi.com RMPA0963 i-lo? rev. e RMPA0963 i - l o ? cellular cdma, cdma2000-1x and wcdma power amplifier module (preliminary) package outline signal descriptions 1 i/o 1 indicator top view front view bottom view detail a. typ. (4.00mm 1.60mm max. .30mm typ. .18mm 3.65mm .85mm typ. .25mm typ. 1.08mm 1.84mm 3.50mm typ. see detail a ) square +.100 ?.050 2 3 4 5 10 9 8 7 6 11 1 2 .40mm .10mm .10mm .40mm .45mm xytt z 0963 xytt z 0963 pin # signal name description 1 vref reference voltage 2 vmode high power/low power mode control 3 gnd ground 4 rf in rf input signal 5 vcc1 supply voltage to input stage 6 vcc2 supply voltage to output stage 7 gnd ground 8 rf out rf output signal 9 gnd ground 10 gnd ground 11 gnd paddle ground
6 www.fairchildsemi.com RMPA0963 i-lo? rev. e RMPA0963 i - l o ? cellular cdma, cdma2000-1x and wcdma power amplifier module (preliminary) application information caution: this is an esd sensitive device precautions to avoid permanent device damage: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. devices should remain in their orig- inal packaging until component placement to ensure no con- tamination or damage to rf, dc & ground contact areas. device cleaning: standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. static sensitivity: follow esd precautions to protect against esd damage: a properly grounded static-dissipative surface on which to place devices. static-dissipative floor or mat. a properly grounded conductive wrist strap for each per- son to wear while handling devices. general handling: handle the package on the top with a vac- uum collet or along the edges with a sharp pair of bent twee- zers. avoiding damaging the rf, dc, & ground contacts on the package bottom. do not apply excessive pressure to the top of the lid. device storage: devices are supplied in heat-sealed, mois- ture-barrier bags. in this condition, devices are protected and require no special storage conditions. once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. device usage: fairchild rf recommends the following procedures prior to assembly. dry-bake devices at 125c for 24 hours minimum. note: the shipping trays cannot withstand 125c baking temperature assemble the dry-baked devices within 7 days of removal from the oven. during the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a max- imum temperature of 30c if the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. solder materials & temperature profile: reflow soldering is the preferred method of smt attachment. hand soldering is not recommended. reflow profile ramp-up: during this stage the solvents are evaporated from the solder paste. care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. a typical heating rate is 1- 2c/sec. pre-heat/soak: the soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. the recommended soak condition is: 120-150 seconds at 150c. reflow zone: if the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive sol- der oxidation. excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/ board interface and may lead to early mechanical failure of the joint. reflow must occur prior to the flux being com- pletely driven off. the duration of peak reflow temperature should not exceed 10 seconds. maximum soldering tem- peratures should be in the range 215-220c, with a maxi- mum limit of 225c. cooling zone: steep thermal gradients may give rise to excessive thermal shock. however, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. the illustration below indicates the recommended soldering profile. solder joint characteristics: proper operation of this device depends on a reliable void-free attachment of the heatsink to the pwb. the solder joint should be 95% void-free and be a consistent thickness. rework considerations: rework of a device attached to a board is limited to reflow of the solder with a heat gun. the device should not be subjected to more than 225c and reflow solder in the molten state for more than 5 seconds. no more than 2 rework operations should be performed. recommended solder reflow profile 0 20 40 60 80 100 120 140 deg (?) time (sec) 10 sec 183? 1?/sec 1?/sec soak at 150? for 60 sec 45 sec (max) above 183? 160 180 200 220 240 0 60 120 180 240 300
7 www.fairchildsemi.com RMPA0963 i-lo? rev. e RMPA0963 i - l o ? cellular cdma, cdma2000-1x and wcdma power amplifier module (preliminary) disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation . as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic optoplanar? pacman? fast fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i15 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? pop? power247? poweredge? powersaver? powertrench qfet qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic tinyopto? trutranslation? uhc? ultrafet unifet? vcx? across the board. around the world.? the power franchise programmable active droop?
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